The formation of ohmic contacts on the backside of SiC power devices plays a key role in defining their electrical characteristics and mechanical strength. Traditionally, thermal annealing has been used for ohmic contact formation, but the extremely high temperatures associated with this process can damage structures on the front side of wafers.
Register now for our free webinar ”Selective Laser Annealing for Ohmic Contact Formation (OCF)” on Sept 7, 2021 4:00 pm.
This webinar will cover the following topics:
• Thermal annealing vs. selective laser annealing
• Advantages for thin wafers
• 3D-Micromac’s Solution – microPRO™ XS for OCF